PART |
Description |
Maker |
IS61C1024AL-12KI IS61C1024AL-12TLI IS61C1024AL-12K |
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 12 ns, PDSO32
|
Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
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CY62137CVSL-70BVI CY62137CV CY62137CV25 CY62137CV2 |
Very high speed: 55 ns and 70 ns (CY62137CV25 / CY62137CV30 / CY62137CV33) 2M (128K x 16) Static RAM 32-Bit Transparent D-Type Latch with 3-State Outputs 96-LFBGA -40 to 85 2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 55 ns, PBGA48 2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PBGA48
|
CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit)(4分位,写延迟LVTTL高速同步静态随机存储器28K的36位) 4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发(HSTL)、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速(128K的x 36Bit)(4分位,写延迟,高速逻辑收发(HSTL),高速同步静态随机存储器28K的36位)同步静态存储器
|
Sony, Corp.
|
A63G7332 A63G7332E-42 A63G7332E-45 A63G7332E-5 A63 |
128K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 128K的32位同步高的Burst计数器和流水线数据输出高速SRAM 4.2ns 128K x 32bit synchronous high speed SRAM 4.2ns; 128K x 32bit synchronous high speed SRAM with burst counter and pipelined data output 4.5ns 128K x 32bit synchronous high speed SRAM 4.5ns; 128K x 32bit synchronous high speed SRAM with burst counter and pipelined data output
|
AMIC Technology, Corp. AMIC Technology Corporation
|
EDI8L32128C12AI EDI8L32128C15AI EDI8L32128C20AI ED |
15ns; 5V power supply; 128K x 32 CMOS high speed static RAM 20ns; 5V power supply; 128K x 32 CMOS high speed static RAM 17ns; 5V power supply; 128K x 32 CMOS high speed static RAM
|
White Electronic Designs
|
IS63LV1024 IS63LV1024-10TI IS63LV1024-10T IS63LV10 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 8 ns, PDSO32 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 10 ns, PDSO32 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 15 ns, PDSO32
|
Integrated Silicon Solu... ISSI[Integrated Silicon Solution Inc] ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution, Inc. Integrated Silicon Solution Inc EPCOS AG
|
IC61LV12816 IC61LV12816-8TI IC61LV12816-10B IC61LV |
128K x 16 Hight Speed SRAM with 3.3V 128K的16 Hight高速SRAM.3V ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Toshiba, Corp. Linear Technology, Corp. Electronic Theatre Controls, Inc. ICSI[Integrated Circuit Solution Inc]
|
KM681002C KM681002C-10 KM681002C-12 KM681002C-15 K |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAM5V工作。在经营商业和工业温度范围 128K X 8 STANDARD SRAM, 20 ns, PDSO32 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
V61C3181024 |
128K X 8 HIGH SPEED STATIC RAM
|
MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
|
29C010PI-1 29C010PI-2 29C010PI-3 29C010JC-1 29C010 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns. High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns.
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Turbo IC
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